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FAIRCHILD SEMICONDUCTOR  FDC658P  MOSFET Transistor, P Channel, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V

FAIRCHILD SEMICONDUCTOR FDC658P
Technical Data Sheet (203.81KB) EN See all Technical Docs

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Product Overview

The FDC658P is a logic level single P-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited load switching, battery charging circuits and DC-to-DC conversion.
  • High performance Trench technology for extremely low RDS (ON)
  • 8nC Typical low gate charge

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-4A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.041ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1.7V
Power Dissipation Pd:
1.6W
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Portable Devices;
  • Computers & Computer Peripherals

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, P Channel, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V

FAIRCHILD SEMICONDUCTOR

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Price for: Each (Supplied on Full Reel)

1+ $0.256 9000+ $0.247 24000+ $0.234 45000+ $0.228

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