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FAIRCHILD SEMICONDUCTOR  FQD2N100TM  Power MOSFET, N Channel, 1.6 A, 1 kV, 7.1 ohm, 10 V, 5 V

FAIRCHILD SEMICONDUCTOR FQD2N100TM
Technical Data Sheet (1.08MB) EN Technical Data Sheet (2.01MB) EN See all Technical Docs

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Product Overview

The FQD2N100TM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
  • Low gate charge (12nC)
  • Low Crss (5pF)
  • 100% avalanche tested

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.6A
Drain Source Voltage Vds:
1kV
On Resistance Rds(on):
7.1ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
50W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management;
  • Lighting

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

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