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MW6S004NT1 - 

RF FET Transistor, 68 V, 1 MHz, 2 GHz, PLD-1.5

MW6S004NT1 - RF FET Transistor, 68 V, 1 MHz, 2 GHz, PLD-1.5

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Manufacturer:
NXP NXP
Manufacturer Part No:
MW6S004NT1
Newark Part No.:
34R2431
Technical Datasheet:
(EN)
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Product Overview

The MW6S004NT1 is a N-channel RF Power FET designed for class A or class AB base station applications with frequencies up to 2000MHz. It is suitable for analogue and digital modulation and multicarrier amplifier applications.
  • Characterized with series equivalent large-signal impedance parameters
  • On-chip RF feedback for broadband stability
  • Integrated ESD protection

Applications

Industrial, RF Communications, Power Management

Product Information

:
68V
:
-
:
-
:
1MHz
:
2GHz
:
PLD-1.5
:
4Pins
:
150°C
:
-
:
MSL 3 - 168 hours
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