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FUJI ELECTRIC  1MBI1600U4C-170  IGBT Array & Module Transistor, Dual N Channel, 2.4 kA, 2.47 V, 9.76 kW, 1.7 kV, Module

FUJI ELECTRIC 1MBI1600U4C-170
Manufacturer Part No:
1MBI1600U4C-170
Newark Part No.:
54W0200
Technical Datasheet:
See all Technical Docs

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Product Information

Transistor Polarity:
Dual N Channel
DC Collector Current:
2.4kA
Collector Emitter Saturation Voltage Vce(on):
2.47V
Power Dissipation Pd:
9.76kW
Collector Emitter Voltage V(br)ceo:
1.7kV
Transistor Case Style:
Module
No. of Pins:
7Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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RoHS Compliant:
No
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