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FUJI ELECTRIC  2MBI200U2A-060-50  IGBT Array & Module Transistor, N Channel, 200 A, 2.45 V, 660 W, 600 V, Module

FUJI ELECTRIC 2MBI200U2A-060-50
Manufacturer Part No:
2MBI200U2A-060-50
Newark Part No.:
56P5429
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2MBI200U2A-060-50 is a NPT half-bridge IGBT Module for use with inverters, welding and lasers.
  • Industry standard package with screw-thread power terminals

Product Information

Transistor Polarity:
N Channel
DC Collector Current:
200A
Collector Emitter Saturation Voltage Vce(on):
2.45V
Power Dissipation Pd:
660W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
Module
No. of Pins:
7Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

RoHS Compliant:
Yes
Independent Distributor

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