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INFINEON  IRL60B216  MOSFET Transistor, N Channel, 195 A, 60 V, 0.0015 ohm, 10 V, 2.4 V

INFINEON IRL60B216
Technical Data Sheet (719.99KB) EN See all Technical Docs

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Product Overview

The IRL60B216 is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC converters and DC-to-AC inverters. It is optimized for logic level drive.
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and di/dt capability
  • Halogen-free

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
195A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0015ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.4V
Power Dissipation Pd:
375W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Motor Drive & Control;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products