Low

INFINEON  IRLML6302PBF  MOSFET Transistor, P Channel, 600 mA, -20 V, 600 mohm, -4.5 V, -1.5 V

INFINEON IRLML6302PBF
Technical Data Sheet (246.26KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRLML6302PBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
  • Generation V technology
  • Low profile (<1.1mm)
  • Fast switching
  • Low static drain-to-source ON-resistance
  • Dynamic dV/dt rating
  • Fully avalanche rating
  • Halogen-free

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
600mA
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.6ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-1.5V
Power Dissipation Pd:
400mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Portable Devices;
  • Computers & Computer Peripherals;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products