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IXYS SEMICONDUCTOR  IXFH12N90P  Power MOSFET, N Channel, 12 A, 900 V, 900 mohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR IXFH12N90P
Technical Data Sheet (179.13KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IXFH12N90P is a HiPerFET™ N-channel enhancement-mode Polar™ Power MOSFET features avalanche rated and fast intrinsic diode.
  • Low package inductance
  • International standard package
  • Easy to mount
  • Space savings
  • High power density

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
12A
Drain Source Voltage Vds:
900V
On Resistance Rds(on):
0.9ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3.5V
Power Dissipation Pd:
380W
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Robotics;
  • Industrial;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products