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IXYS SEMICONDUCTOR  MII100-12A3  IGBT Single Transistor, 135 A, 2.2 V, 560 W, 1.2 kV, Module, 7

IXYS SEMICONDUCTOR MII100-12A3
Manufacturer Part No:
MII100-12A3
Newark Part No.:
68X3091
Technical Datasheet:
See all Technical Docs

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Product Information

DC Collector Current:
135A
Collector Emitter Saturation Voltage Vce(on):
2.2V
Power Dissipation Pd:
560W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
Module
No. of Pins:
7Pins
Operating Temperature Max:
125°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (12-Jan-2017)

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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