Low

LITTELFUSE  MG1275S-BA1MM  IGBT Array & Module Transistor, Dual NPN, 105 A, 1.8 V, 630 W, 1.2 kV, Module

LITTELFUSE MG1275S-BA1MM
Manufacturer Part No:
MG1275S-BA1MM
Newark Part No.:
31Y2593
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
Dual NPN
DC Collector Current:
105A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
630W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
Module
No. of Pins:
7Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Legislation and Environmental

Authorized Distributor

Substitutes

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.