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NTE ELECTRONICS  2N3054  Bipolar (BJT) Single Transistor, NPN, 55 V, 3 MHz, 25 W, 4 A, 150 hFE

NTE ELECTRONICS 2N3054
Technical Data Sheet (50.47KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N3054 is a silicon NPN Bipolar Transistor designed for general purpose medium power switching and amplifier applications.
  • Excellent safe operating area
  • DC Current gain specified to 3A
  • -65 to 200°C Operating junction temperature range

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
55V
Transition Frequency ft:
3MHz
Power Dissipation Pd:
25W
DC Collector Current:
4A
DC Current Gain hFE:
150hFE
Transistor Case Style:
TO-66
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products