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BLT80,115 - 

Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

BLT80,115 - Bipolar - RF Power Transistor, 900 MHz, 900 MHz, 25 hFE, 250 mA

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
NXP NXP
Manufacturer Part No:
BLT80,115
Newark Part No.:
75R4685
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The BLT80,115 is a 10V NPN silicon planar epitaxial UHF Power Transistor for handheld radio equipment in the 900MHz communication band.
  • SMD encapsulation
  • Gold metallization ensures excellent reliability
  • 20V Collector to base voltage (VCBO)
  • 3V Emitter to base voltage (VEBO)
  • 85K/W Thermal resistance, junction to ambient

Applications

RF Communications, Communications & Networking

Product Information

:
900MHz
:
900MHz
:
25hFE
:
250mA
:
-
:
-
:
10V
:
6dB
:
2W
:
6dB
:
SOT-223
:
3 Pin
:
-
:
-
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