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NXP  BST62,115  Bipolar (BJT) Single Transistor, Darlington, PNP, -80 V, 200 MHz, 1.3 W, -1 A, 2000 hFE

NXP BST62,115

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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-80V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
1.3W
DC Collector Current:
-1A
DC Current Gain hFE:
2000hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, Darlington, PNP, -80 V, 200 MHz, 1.3 W, -1 A, 2000

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