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ON SEMICONDUCTOR  BC847ALT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 110 hFE

ON SEMICONDUCTOR BC847ALT1G
Technical Data Sheet (172.41KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BC847ALT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive load protection and steering logic.
  • Halogen-free/BFR-free
  • ESD rating - >4000V human body model, >400V machine model
  • 50V Collector to base voltage (VCBO)
  • 6V Emitter to base voltage (VEBO)
  • 556°C/W Thermal resistance, junction to ambient
ESD sensitive device, take proper precaution while handling the device.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
45V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
300mW
DC Collector Current:
100mA
DC Current Gain hFE:
110hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
BCxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Safety

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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