Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 110 hFE
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- ESD rating - >4000V human body model, >400V machine model
- 50V Collector to base voltage (VCBO)
- 6V Emitter to base voltage (VEBO)
- 556°C/W Thermal resistance, junction to ambient
Industrial, Power Management, Safety
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