Low

MJE210G - 

Bipolar (BJT) Single Transistor, PNP, 25 V, 65 MHz, 15 W, 5 A, 65 hFE

MJE210G - Bipolar (BJT) Single Transistor, PNP, 25 V, 65 MHz, 15 W, 5 A, 65 hFE

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Manufacturer Part No:
MJE210G
Newark Part No.:
45J1501
Product Range
MJxxxx Series
Technical Datasheet:
(EN)
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Product Overview

The MJE210G is a PNP complementary silicon Power Transistor designed for low voltage, low-power and high-gain audio amplifier applications. The device offers high DC current gain and low collector to emitter saturation voltage.
  • High current-gain-bandwidth product
  • Annular construction for low leakage
  • 40VDC Collector-emitter voltage
  • 25VDC Collector-base voltage
  • 8VDC Emitter-base voltage
  • 5A Continuous collector current

Applications

Industrial, Audio, Power Management

Product Information

:
PNP
:
25V
:
65MHz
:
15W
:
5A
:
65hFE
:
TO-225
:
3Pins
:
150°C
:
MJxxxx Series
:
-
:
MSL 1 - Unlimited
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