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ON SEMICONDUCTOR  MJE350G  Bipolar (BJT) Single Transistor, General Purpose, PNP, 300 V, 20 W, 500 mA, 240 hFE

ON SEMICONDUCTOR MJE350G
Technical Data Sheet (97.15KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MJE350G is a 0.5A PNP bipolar Power Transistor designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
300V
Transition Frequency ft:
-
Power Dissipation Pd:
20W
DC Collector Current:
500mA
DC Current Gain hFE:
240hFE
Transistor Case Style:
TO-225AA
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MJxxxx Series
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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