Low

MMBT6517LT1G - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 350 V, 200 MHz, 225 mW, 100 mA, 15 hFE

ON SEMICONDUCTOR MMBT6517LT1G

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
MMBT6517LT1G
Newark Part No.:
45J1537
Product Range
MMBTxxxx Series
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
225mW
:
-
:
350V
:
200MHz
:
150°C
:
3Pins
:
NPN
:
15hFE
:
MMBTxxxx Series
:
100mA
:
SOT-23
:
MSL 1 - Unlimited
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The MMBT6517LT1G is a NPN high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface-mount applications.
  • Low RDS (ON) provides higher efficiency and extends battery life
  • Saves board space

Applications

Industrial, Power Management

Substitutes

Compare Selected
Manufacturer Part Number
Newark Part No.
Manufacturer / Description
Avail
Price For
Quantity
0

Each (Supplied on Full Reel)

3000+ $0.076 9000+ $0.065 24000+ $0.061 45000+ $0.058 More pricing

Add