Low

ON SEMICONDUCTOR  MMBT6517LT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 350 V, 200 MHz, 225 mW, 100 mA, 15 hFE

ON SEMICONDUCTOR MMBT6517LT1G
Technical Data Sheet (119.71KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MMBT6517LT1G is a NPN high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface-mount applications.
  • Low RDS (ON) provides higher efficiency and extends battery life
  • Saves board space

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
350V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
225mW
DC Collector Current:
100mA
DC Current Gain hFE:
15hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

FJV42MTF

TAPE REEL / NPN,350V/0.5A

FAIRCHILD SEMICONDUCTOR

0

Price for: Each (Supplied on Full Reel)

1+ $0.076 9000+ $0.065 24000+ $0.061 45000+ $0.058 More pricing

 
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