Low

ON SEMICONDUCTOR  MMBT6517LT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 350 V, 200 MHz, 225 mW, 100 mA, 15 hFE

ON SEMICONDUCTOR MMBT6517LT1G
Manufacturer Part No:
MMBT6517LT1G
Newark Part No.:
45J1537
Product Range
MMBTxxxx Series
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MMBT6517LT1G is a NPN high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface-mount applications.
  • Low RDS (ON) provides higher efficiency and extends battery life
  • Saves board space

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
350V
Transition Frequency ft:
200MHz
Power Dissipation Pd:
225mW
DC Collector Current:
100mA
DC Current Gain hFE:
15hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Industrial
  • Power Management

Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

Substitutes

FJV42MTF

TAPE REEL / NPN,350V/0.5A

FAIRCHILD SEMICONDUCTOR

0

Price for: Each (Supplied on Full Reel)

3000+ $0.076 9000+ $0.065 24000+ $0.061 45000+ $0.058 More pricing

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