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ON SEMICONDUCTOR  NGD8205ANT4G  IGBT Single Transistor, 20 A, 1.3 V, 125 W, 350 V, TO-252, 3 Pins

ON SEMICONDUCTOR NGD8205ANT4G
Manufacturer Part No:
NGD8205ANT4G
Newark Part No.:
05W5641
Technical Datasheet:
See all Technical Docs

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Product Overview

The NGD8205ANT4G is a 300V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for use in ignition, direct fuel injection or wherever high voltage and high current switching is required. The logic level IGBT features monolithic circuitry integratin...
  • Ideal for coil on plug and driver on coil applications
  • Gate-emitter ESD protection
  • Temperature compensated gate-collector voltage clamp limits stress applied to load
  • Integrated ESD diode protection
  • Low threshold voltage interfaces power loads to logic or microprocessor devices
  • Low saturation voltage
  • High pulsed current capability

Product Information

DC Collector Current:
20A
Collector Emitter Saturation Voltage Vce(on):
1.3V
Power Dissipation Pd:
125W
Collector Emitter Voltage V(br)ceo:
350V
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

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