NGD8205ANT4G - 

IGBT Single Transistor, 20 A, 1.3 V, 125 W, 350 V, TO-252, 3 Pins

NGD8205ANT4G - IGBT Single Transistor, 20 A, 1.3 V, 125 W, 350 V, TO-252, 3 Pins

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Newark Part No.:
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Product Overview

The NGD8205ANT4G is a 300V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for use in ignition, direct fuel injection or wherever high voltage and high current switching is required. The logic level IGBT features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers applications.
  • Ideal for coil on plug and driver on coil applications
  • Gate-emitter ESD protection
  • Temperature compensated gate-collector voltage clamp limits stress applied to load
  • Integrated ESD diode protection
  • Low threshold voltage interfaces power loads to logic or microprocessor devices
  • Low saturation voltage
  • High pulsed current capability


Power Management, Industrial

Product Information

MSL 1 - Unlimited
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340 In stock

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More stock available week commencing 07/05/18
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