Low

TTA1943 - 

Bipolar (BJT) Single Transistor, Audio, PNP, -230 V, 30 MHz, 150 W, -15 A, 160 hFE

TOSHIBA TTA1943

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
TOSHIBA TOSHIBA
Manufacturer Part No:
TTA1943
Newark Part No.:
55T7375
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
150W
:
-
:
-230V
:
30MHz
:
150°C
:
3Pins
:
PNP
:
160hFE
:
-
:
-15A
:
TO-3P
:
-
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Product Overview

The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
  • Collector to emitter voltage (Vce) is -230V
  • Collector current (Ic) is -15A
  • Power dissipation (Pd) is 150W
  • Collector to emitter saturation voltage of -3V at -8A collector current
  • DC current gain (hFE) of 80 at -1A collector current
  • Operating junction temperature range from 150°C

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial

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