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TOSHIBA  TTA1943  Bipolar (BJT) Single Transistor, Audio, PNP, -230 V, 30 MHz, 150 W, -15 A, 160 hFE

TOSHIBA TTA1943
Technical Data Sheet (190.27KB) EN See all Technical Docs

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Product Overview

The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
  • Collector to emitter voltage (Vce) is -230V
  • Collector current (Ic) is -15A
  • Power dissipation (Pd) is 150W
  • Collector to emitter saturation voltage of -3V at -8A collector current
  • DC current gain (hFE) of 80 at -1A collector current
  • Operating junction temperature range from 150°C

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-230V
Transition Frequency ft:
30MHz
Power Dissipation Pd:
150W
DC Collector Current:
-15A
DC Current Gain hFE:
160hFE
Transistor Case Style:
TO-3P
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Independent Distributor

Associated Products