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VISHAY  SI3460DV-T1-GE3  MOSFET Transistor, N Channel, 6.8 A, 20 V, 27 mohm, 4.5 V, 450 mV

VISHAY SI3460DV-T1-GE3
Technical Data Sheet (177.10KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6.8A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.027ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
450mV
Power Dissipation Pd:
1.1W
Transistor Case Style:
TSOP
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

SI3460DV-T1-E3

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,5.1A I(D),TSOP

VISHAY

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Price for: Each (Supplied on Full Reel)

3000+ $0.955 6000+ $0.909

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