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VISHAY  SI4564DY-T1-GE3  Dual MOSFET, N and P Channel, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV

VISHAY SI4564DY-T1-GE3
Manufacturer:
VISHAY VISHAY
Manufacturer Part No:
SI4564DY-T1-GE3
Newark Part No.:
86R3889
Technical Datasheet:
See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
10A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
0.0145ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
800mV
Power Dissipation Pd:
3.1W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

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Dual MOSFET, N and P Channel, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV

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Dual MOSFET, N and P Channel, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV

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