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IXFK44N80P
Power MOSFET, N Channel, 800 V, 44 A, 0.19 ohm, TO-264, Through Hole
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFK44N80P
Newark Part No.58M7611
Technical Datasheet
506 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $29.690 |
| 5+ | $26.210 |
| 10+ | $22.720 |
| 25+ | $20.900 |
| 50+ | $20.230 |
| 100+ | $19.840 |
Price for:Each
Minimum: 1
Multiple: 1
$29.69
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFK44N80P
Newark Part No.58M7611
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id44A
On Resistance Rds(on)0.19ohm
Drain Source On State Resistance0.19ohm
Transistor Case StyleTO-264
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd1.2kW
Gate Source Threshold Voltage Max5V
Power Dissipation1.2kW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFK44N80P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- Unclamped inductive switching (UIS) rated
- Low package inductance
- Easy to mount
- Space savings
- High power density
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
44A
Drain Source On State Resistance
0.19ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
1.2kW
Power Dissipation
1.2kW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
800V
On Resistance Rds(on)
0.19ohm
Transistor Case Style
TO-264
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability