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IXYS SEMICONDUCTOR IXFN80N50

Bipolar (BJT) Single Transistor, HiPerFET, N Channel, 80 A, 500 V, 0.055 ohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR IXFN80N50
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Manufacturer Part No:
IXFN80N50
Newark Part No.:
38K3184
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Product Range
HiPerFET Series
Technical Datasheet:
IXFN80N50   Datasheet
ECAD / MCAD
Supply Frame Models Link
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Product Range Selector (HiPerFET Series)

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Product Overview

IXFN80N50 is a HiPerFET™ single die power MOSFET. Typical applications are DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, temperature and lighting controls.
  • N-channel enhancement mode
  • Avalanche rated, high dv/dt, low trr
  • International standard package, miniBLOC with aluminum nitride isolation
  • Low RDS (on) HDMOSTM process
  • Rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated
  • Low package inductance, fast intrinsic rectifier
  • Easy to mount, space savings, high power density
  • Voltage rating VDSS is 500V at TJ = 25°C to 150°C
  • Current rating ID25 is 80A at TC = 25°C, time trr is 250ns at F = 30A, -di/dt = 100 A/µs, VR = 100V
  • Resistor RDS(on) is 55mohm at VGS = 10V, ID = 0.5 ID25, pulse test, t ≤ 300µs

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
N Channel

:
N Channel

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80A

:
500V

:
0.055ohm

:
0.055ohm

:
10V

:
4.5V

:
Module

:
780W

:
780W

:
SOT-227B

:
4Pins

:
150°C

:
HiPerFET Series

:
-

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Technical Documents (1)

Available for back order

More stock available to supplier lead times which is approximately 06/01/25

UK Stock

 

Delivery in 2-4 business days from our UK warehouse for in stock items

Delivery in 2-4 business days
(UK Stock)

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

$84.79

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