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| Quantity | Price |
|---|---|
| 1+ | $2.510 |
| 10+ | $1.940 |
| 25+ | $1.730 |
| 50+ | $1.530 |
| 100+ | $1.320 |
| 250+ | $1.190 |
| 500+ | $1.060 |
| 1000+ | $0.991 |
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Multiple: 1
$2.51
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC8622
Newark Part No.88T3280
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id16A
On Resistance Rds(on)0.0437ohm
Drain Source On State Resistance0.0437ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd31W
Gate Source Threshold Voltage Max2.9V
Power Dissipation31W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDMC8622 is a N-channel MOSFET produced using advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- 100% UIL tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
0.0437ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
31W
Power Dissipation
31W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0437ohm
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for FDMC8622
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Associated Products
6 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability