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MJD3055T4G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 10 A, 1.75 W, TO-252 (DPAK)
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| Quantity | Price |
|---|---|
| 1+ | $0.320 |
| 10+ | $0.320 |
| 25+ | $0.320 |
| 50+ | $0.320 |
| 100+ | $0.320 |
| 250+ | $0.320 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD3055T4G
Newark Part No.98H0734
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Collector Emitter Voltage V(br)ceo60V
Continuous Collector Current10A
Power Dissipation1.75W
Power Dissipation Pd1.75W
DC Collector Current10A
DC Current Gain hFE5hFE
Transistor MountingSurface Mount
No. of Pins4Pins
Transistor Case StyleTO-252 (DPAK)
Transition Frequency2MHz
DC Current Gain hFE Min5hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation
1.75W
DC Collector Current
10A
Transistor Mounting
Surface Mount
Transistor Case Style
TO-252 (DPAK)
DC Current Gain hFE Min
5hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
60V
Continuous Collector Current
10A
Power Dissipation Pd
1.75W
DC Current Gain hFE
5hFE
No. of Pins
4Pins
Transition Frequency
2MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability