NDP6060
Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $0.680 |
| 10+ | $0.680 |
| 25+ | $0.680 |
| 50+ | $0.680 |
| 100+ | $0.680 |
| 250+ | $0.680 |
| 500+ | $0.680 |
Product Information
Product Overview
The NDP6060 is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
- Critical DC electrical parameters specified at elevated temperature
- High density cell design for extremely low RDS (ON)
Technical Specifications
N Channel
60V
0.025ohm
TO-220AB
100W
2.9V
3Pins
-
-
N Channel
48A
0.025ohm
Through Hole
10V
100W
175°C
-
Lead (27-Jun-2024)
Technical Docs (3)
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