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SI2347DS-T1-GE3
Power MOSFET, P Channel, 30 V, 5 A, 42 mohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.594 |
| 10+ | $0.370 |
| 25+ | $0.331 |
| 50+ | $0.292 |
| 100+ | $0.253 |
| 250+ | $0.234 |
| 500+ | $0.213 |
| 1000+ | $0.192 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2347DS-T1-GE3
Newark Part No.70AC6496
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5A
On Resistance Rds(on)0.033ohm
Drain Source On State Resistance42mohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd1.7W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.033ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
1.7W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
5A
Drain Source On State Resistance
42mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
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