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SI7469DP-T1-GE3
Power MOSFET, P Channel, 80 V, 28 A, 0.025 ohm, PowerPAK SO, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $3.760 |
| 25+ | $2.450 |
| 50+ | $2.130 |
| 100+ | $1.800 |
| 250+ | $1.660 |
| 500+ | $1.510 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.76
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7469DP-T1-GE3
Newark Part No.26R1927
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id28A
Drain Source On State Resistance0.025ohm
On Resistance Rds(on)0.029ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd5.2W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max3V
Power Dissipation5.2W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The SI7469DP-T1-GE3 is a 80VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5.2W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
28A
On Resistance Rds(on)
0.029ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK SO
Power Dissipation
5.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability