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TSHG8200
Infrared Emitter, High Speed, 830 nm, 10 °, T-1 3/4 (5mm), 20 mW/Sr, 20 ns, 13 ns
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.936 |
Price for:Each
Minimum: 4000
Multiple: 4000
$3,744.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoTSHG8200
Newark Part No.93K0966
Technical Datasheet
Peak Wavelength830nm
Angle of Half Intensity10°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)20mW/Sr
Rise Time20ns
Fall Time tf13ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.5V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range-
SVHCNo SVHC (15-Jan-2019)
Product Overview
The TSHG8200 is an infrared, 830nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, moulded in a clear, untinted plastic package. It is suitable for use in Infrared radiation source for operation with CMOS cameras (illumination), high speed IR data transmission and smoke-automatic fire detectors.
- Package form: T-1¾
- Dimensions (in mm): DIA 5
- Peak wavelength: 830nm
- High radiant intensity
- Angle of half intensity ±10°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc = 18MHz
- Good spectral matching with CMOS cameras
Technical Specifications
Peak Wavelength
830nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
20ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Product Range
-
Angle of Half Intensity
10°
Radiant Intensity (Ie)
20mW/Sr
Fall Time tf
13ns
Forward Voltage VF Max
1.5V
Operating Temperature Max
85°C
SVHC
No SVHC (15-Jan-2019)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2019)
Download Product Compliance Certificate
Product Compliance Certificate