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Product Information
ManufacturerNXP
Manufacturer Part NoBFR540,215
Newark Part No.70R2555
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Collector Emitter Voltage V(br)ceo15V
Transition Frequency9GHz
Power Dissipation Pd500mW
Power Dissipation500mW
Continuous Collector Current120mA
DC Collector Current120mA
DC Current Gain hFE120hFE
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3Pins
DC Current Gain hFE Min120hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
The BFR540,215 is a NPN silicon epitaxial planar Wideband Transistor offers high power gain and low-noise figure. It is designed for use with RF front end wideband applications in the GHz range, analogue and digital cellular telephones, cordless telephones (CT1, CT2, DECT), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic system applications.
- High transition frequency
- Gold metallization ensures excellent reliability
Applications
Industrial, RF Communications, Fibre Optics, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
15V
Power Dissipation Pd
500mW
Continuous Collector Current
120mA
DC Current Gain hFE
120hFE
RF Transistor Case
SOT-23
DC Current Gain hFE Min
120hFE
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max
15V
Transition Frequency
9GHz
Power Dissipation
500mW
DC Collector Current
120mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate