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SI2328DS-T1-GE3
Power MOSFET, N Channel, 100 V, 1.15 A, 0.25 ohm, TO-236, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2328DS-T1-GE3
Newark Part No.
Full Reel96AJ0110
Re-Reel84R8031
Cut Tape84R8031
Your Part Number
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Order before 9pm EST standard shipping
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.160 |
| 25+ | $0.978 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.844 |
| 6000+ | $0.819 |
| 12000+ | $0.809 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2328DS-T1-GE3
Newark Part No.
Full Reel96AJ0110
Re-Reel84R8031
Cut Tape84R8031
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.15A
Drain Source On State Resistance0.25ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The SI2328DS-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.15A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate