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NTBG014N120M3P
Silicon Carbide MOSFET, Single, N Channel, 104 A, 1.2 kV, 0.014 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTBG014N120M3P
Newark Part No.57AK6403
Product RangeEliteSiC Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 250+ | $28.140 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
$22,512.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG014N120M3P
Newark Part No.57AK6403
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id104A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.63V
Power Dissipation227W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
104A
Drain Source On State Resistance
0.014ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.63V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
227W
Product Range
EliteSiC Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate