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NXH011F120M3F2PTHG
Silicon Carbide MOSFET, Full Bridge, N Channel, 105 A, 1.2 kV, 0.016 ohm, PIM
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Available to Order
Manufacturer Standard Lead Time: 21 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $177.050 |
| 5+ | $169.110 |
| 10+ | $161.190 |
| 40+ | $153.250 |
Price for:Each
Minimum: 1
Multiple: 1
$177.05
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH011F120M3F2PTHG
Newark Part No.08AM4244
MOSFET Module ConfigurationFull Bridge
Channel TypeN Channel
Continuous Drain Current Id105A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.016ohm
Transistor Case StylePIM
No. of Pins34Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation244W
Operating Temperature Max150°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Full Bridge
Continuous Drain Current Id
105A
Drain Source On State Resistance
0.016ohm
No. of Pins
34Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
PIM
Rds(on) Test Voltage
18V
Power Dissipation
244W
Product Range
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate