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SCT018H65G3-7
SIC MOSFET, N-CH, 650V, 55A, H2PAK ROHS COMPLIANT: YES
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100 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $34.420 |
| 10+ | $32.290 |
| 25+ | $30.430 |
| 50+ | $28.600 |
| 100+ | $26.780 |
| 250+ | $25.500 |
| 500+ | $24.450 |
| 1000+ | $23.600 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$34.42
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT018H65G3-7
Newark Part No.47AM2255
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id55A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.027ohm
Transistor Case StyleH2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation385W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
55A
Drain Source On State Resistance
0.027ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
H2PAK
Rds(on) Test Voltage
18V
Power Dissipation
385W
Product Range
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability