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SISS10ADN-T1-GE3
MOSFET, N-CH, 40V, 109A, POWERPAK 1212 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS10ADN-T1-GE3
Newark Part No.86AK6252
Product RangeTrenchFET Gen IV Series
Available to Order
Manufacturer Standard Lead Time: 59 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.784 |
| 6000+ | $0.765 |
| 12000+ | $0.745 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$2,352.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS10ADN-T1-GE3
Newark Part No.86AK6252
Product RangeTrenchFET Gen IV Series
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id109A
Drain Source On State Resistance0.00265ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation56.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
109A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
56.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.00265ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
SVHC
To Be Advised
Alternatives for SISS10ADN-T1-GE3
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability