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FQP30N06L
Power MOSFET, N Channel, 60 V, 32 A, 35 mohm, TO-220AB, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP30N06L
Newark Part No.20C4477
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id32A
Drain Source On State Resistance35mohm
On Resistance Rds(on)0.027ohm
Transistor MountingThrough Hole
Power Dissipation Pd79W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleTO-220AB
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FQP30N06L is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
- Low gate charge
- 100% Avalanche tested
- Low crss (typical 50pF)
- ±20V Gate-source voltage
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
35mohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
32A
On Resistance Rds(on)
0.027ohm
Power Dissipation Pd
79W
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
79W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate