Print Page
NTD2955T4G
Power MOSFET, P Channel, 60 V, 12 A, 0.18 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
2,487 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.583 |
| 10+ | $0.583 |
| 25+ | $0.583 |
| 50+ | $0.583 |
| 100+ | $0.583 |
| 250+ | $0.583 |
| 500+ | $0.583 |
| 1000+ | $0.583 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.58
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD2955T4G
Newark Part No.10N9570
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id12A
Drain Source On State Resistance0.18ohm
On Resistance Rds(on)0.155ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd55W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation55W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCLead
Product Overview
The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
- Avalanche energy specified
- IDSS and VDS (on) specified at elevated temperature
- ±20VDC Gate to source voltage
- 2.73°C/W Thermal resistance, junction to case
Applications
Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.18ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
55W
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
12A
On Resistance Rds(on)
0.155ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
55W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Alternatives for NTD2955T4G
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability