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SI2308BDS-T1-GE3
Power MOSFET, N Channel, 60 V, 2.3 A, 0.156 ohm, TO-236, Surface Mount
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| Quantity | Price |
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| 1+ | $0.281 |
| 25+ | $0.281 |
| 50+ | $0.281 |
| 100+ | $0.281 |
| 250+ | $0.281 |
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| 1000+ | $0.258 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-GE3
Newark Part No.16P3708
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.3A
On Resistance Rds(on)0.13ohm
Drain Source On State Resistance0.156ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.09W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3V
Transistor Case StyleTO-236
Power Dissipation1.09W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2308BDS-T1-GE3 is a N-channel TrenchFET® Power MOSFET with 175°C operating temperature.
- 100% Rg Tested
- 100% UIS Tested
- ±20V Gate-source voltage
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.13ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
2.3A
Drain Source On State Resistance
0.156ohm
Power Dissipation Pd
1.09W
Gate Source Threshold Voltage Max
3V
Power Dissipation
1.09W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
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