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IXTN600N04T2
Bipolar (BJT) Single Transistor, N Channel, 600 A, 40 V, 0.0013 ohm, 10 V, 3.5 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXTN600N04T2
Newark Part No.03AH1600
Product RangeTrenchT2 GigaMOS Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 100+ | $31.770 |
Price for:Each
Minimum: 300
Multiple: 10
$9,531.00
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTN600N04T2
Newark Part No.03AH1600
Product RangeTrenchT2 GigaMOS Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id600A
Drain Source Voltage Vds40V
On Resistance Rds(on)0.0013ohm
Drain Source On State Resistance0.0013ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation940W
Operating Temperature Max175°C
Power Dissipation Pd940W
Product RangeTrenchT2 GigaMOS Series
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
600A
On Resistance Rds(on)
0.0013ohm
Rds(on) Test Voltage
10V
Power Dissipation
940W
Power Dissipation Pd
940W
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0013ohm
Gate Source Threshold Voltage Max
3.5V
Operating Temperature Max
175°C
Product Range
TrenchT2 GigaMOS Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability