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FF1MR12MM1HPB11BPSA1
Silicon Carbide MOSFET, Half Bridge, N Channel, 470 A, 1.2 kV, 0.00191 ohm, Module
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ManufacturerINFINEON
Manufacturer Part NoFF1MR12MM1HPB11BPSA1
Newark Part No.26AM1033
Product RangeEconoDUAL 3 Series
Technical Datasheet
17 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $674.170 |
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$674.17
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF1MR12MM1HPB11BPSA1
Newark Part No.26AM1033
Product RangeEconoDUAL 3 Series
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id470A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.00191ohm
Transistor Case StyleModule
No. of Pins11Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.15V
Power Dissipation-
Operating Temperature Max175°C
Product RangeEconoDUAL 3 Series
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
470A
Drain Source On State Resistance
0.00191ohm
No. of Pins
11Pins
Gate Source Threshold Voltage Max
5.15V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
-
Product Range
EconoDUAL 3 Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate