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G3R350MT12J-TR
Silicon Carbide MOSFET, Single, N Channel, 10 A, 1.2 kV, 0.395 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 500+ | $7.700 |
| 1000+ | $7.240 |
Price for:Each (Supplied on Cut Tape)
Minimum: 800
Multiple: 800
$6,160.00
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3R350MT12J-TR
Newark Part No.14AM5529
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id10A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.395ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.7V
Power Dissipation64W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
10A
Drain Source On State Resistance
0.395ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Dec-2015)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
64W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate