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NVH4L030N120M3S
Silicon Carbide MOSFET, N Channel, 60 A, 1.2 kV, 0.0285 ohm, TO-247
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Available to Order
Manufacturer Standard Lead Time: 9 week(s)
| Quantity | Price |
|---|---|
| 250+ | $24.390 |
Price for:Each
Minimum: 450
Multiple: 450
$10,975.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVH4L030N120M3S
Newark Part No.57AK6425
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id60A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0285ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.13V
Power Dissipation308W
Operating Temperature Max175°C
Product Range-
SVHCLead
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.0285ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
3.13V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
308W
Product Range
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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Product Compliance Certificate