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CM150DY-12NF
IGBT Module, Dual [Half Bridge], 150 A, 2.2 V, 590 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM150DY-12NF
Newark Part No.32H5453
Product RangeNF Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 30 week(s)
| Quantity | Price |
|---|---|
| 10+ | $150.370 |
| 25+ | $143.480 |
| 50+ | $140.300 |
| 100+ | $136.030 |
Price for:Each
Minimum: 10
Multiple: 1
$1,503.70
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM150DY-12NF
Newark Part No.32H5453
Product RangeNF Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current150A
DC Collector Current150A
Collector Emitter Saturation Voltage Vce(on)1.7V
Collector Emitter Saturation Voltage2.2V
Power Dissipation590W
Power Dissipation Pd590W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo600V
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product RangeNF Series
SVHCTo Be Advised
Product Overview
The CM150DY-12NF is a 600V Dual IGBTMOD™ NF series Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low Vce (sat)
- Discrete super-fast recovery free-wheel diode
- Isolated baseplate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
150A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
590W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Product Range
NF Series
Continuous Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
590W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate