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FGH75T65SQDNL4
IGBT, 200 A, 1.43 V, 375 W, 650 V, TO-247, 4 Pins
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| Quantity | Price |
|---|---|
| 1+ | $16.950 |
| 10+ | $15.590 |
| 25+ | $14.220 |
| 50+ | $12.860 |
| 100+ | $12.400 |
| 250+ | $11.940 |
Price for:Each
Minimum: 1
Multiple: 1
$16.95
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFGH75T65SQDNL4
Newark Part No.84AC6683
Technical Datasheet
DC Collector Current200A
Continuous Collector Current200A
Collector Emitter Saturation Voltage Vce(on)1.43V
Collector Emitter Saturation Voltage1.43V
Power Dissipation Pd375W
Power Dissipation375W
Collector Emitter Voltage Max650V
Collector Emitter Voltage V(br)ceo650V
Transistor Case StyleTO-247
No. of Pins4Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Technical Specifications
DC Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
1.43V
Power Dissipation Pd
375W
Collector Emitter Voltage Max
650V
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Collector Current
200A
Collector Emitter Saturation Voltage
1.43V
Power Dissipation
375W
Collector Emitter Voltage V(br)ceo
650V
No. of Pins
4Pins
Transistor Mounting
Through Hole
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate