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                      1. Home
                      2. Semiconductors - Discretes
                      3. Transistors
                      4. Bipolar Transistors
                      5. Bipolar Junction Transistor Arrays - BJT
                      Print Page

                      MMDT5451-7-F

                      Bipolar Transistor Array, Dual, Complementary NPN and PNP, 160 V, 160 V, 200 mA, 200 mA, 200 mW

                      Date/Lot Code

                      DIODES INC. MMDT5451-7-F
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerDIODES INC.
                      Manufacturer Part NoMMDT5451-7-F
                      Newark Part No.51R6837
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      3,044 In Stock

                      Need more?

                      Delivery in 2-4 Business Days(UK stock)
                      Order before 9pm EST standard shipping
                      QuantityPrice
                      1+$0.504
                      10+$0.319
                      25+$0.283
                      50+$0.246
                      100+$0.210
                      250+$0.187
                      500+$0.163
                      1000+$0.149
                      Price for:Each (Supplied on Cut Tape)
                      Minimum: 5
                      Multiple: 5
                      $2.52
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerDIODES INC.
                      Manufacturer Part NoMMDT5451-7-F
                      Newark Part No.51R6837
                      Technical Datasheet

                      Data Sheet

                      Transistor PolarityComplementary NPN and PNP
                      Collector Emitter Voltage Max NPN160V
                      Collector Emitter Voltage Max PNP160V
                      Continuous Collector Current NPN200mA
                      Continuous Collector Current PNP200mA
                      Power Dissipation NPN200mW
                      Power Dissipation PNP200mW
                      DC Current Gain hFE Min NPN80hFE
                      DC Current Gain hFE Min PNP80hFE
                      Transistor Case StyleSOT-363
                      No. of Pins6Pins
                      Transistor MountingSurface Mount
                      Operating Temperature Max150°C
                      Transition Frequency NPN300MHz
                      Transition Frequency PNP300MHz
                      Product Range-
                      Qualification-
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (27-Jun-2024)

                      Product Overview

                      The MMDT5451-7-F is a NPN-PNP complementary small signal Bipolar Transistor Array ideal for medium power amplification and switching applications.

                      • UL94V-0 Flammability rating
                      • Epitaxial planar die construction
                      • Ultra-small surface-mount package
                      • Green device
                      • -55 to 150°C Operating temperature range
                      • Complementary pair (5551 - NPN and 5401 - PNP)

                      Applications

                      Defence, Military & Aerospace, Power Management, Industrial

                      Technical Specifications

                      Transistor Polarity

                      Complementary NPN and PNP

                      Collector Emitter Voltage Max PNP

                      160V

                      Continuous Collector Current PNP

                      200mA

                      Power Dissipation PNP

                      200mW

                      DC Current Gain hFE Min PNP

                      80hFE

                      No. of Pins

                      6Pins

                      Operating Temperature Max

                      150°C

                      Transition Frequency PNP

                      300MHz

                      Qualification

                      -

                      SVHC

                      No SVHC (27-Jun-2024)

                      Collector Emitter Voltage Max NPN

                      160V

                      Continuous Collector Current NPN

                      200mA

                      Power Dissipation NPN

                      200mW

                      DC Current Gain hFE Min NPN

                      80hFE

                      Transistor Case Style

                      SOT-363

                      Transistor Mounting

                      Surface Mount

                      Transition Frequency NPN

                      300MHz

                      Product Range

                      -

                      MSL

                      MSL 1 - Unlimited

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (27-Jun-2024)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Product traceability

                      Date/Lot Code

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