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G3R20MT12N
Silicon Carbide MOSFET, Single, N Channel, 105 A, 1.2 kV, 0.02 ohm, SOT-227
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ManufacturerGENESIC
Manufacturer Part NoG3R20MT12N
Newark Part No.89AH0981
Product RangeG3R Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 7 week(s)
| Quantity | Price |
|---|---|
| 100+ | $66.320 |
Price for:Each
Minimum: 200
Multiple: 200
$13,264.00
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3R20MT12N
Newark Part No.89AH0981
Product RangeG3R Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id105A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.02ohm
Drain Source On State Resistance0.02ohm
Transistor Case StyleSOT-227
No. of Pins4Pins
Rds(on) Test Voltage15V
Power Dissipation Pd365W
Gate Source Threshold Voltage Max2.69V
Power Dissipation365W
Operating Temperature Max175°C
Product RangeG3R Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.02ohm
No. of Pins
4Pins
Power Dissipation Pd
365W
Power Dissipation
365W
Product Range
G3R Series
Transistor Polarity
N Channel
Continuous Drain Current Id
105A
On Resistance Rds(on)
0.02ohm
Transistor Case Style
SOT-227
Rds(on) Test Voltage
15V
Gate Source Threshold Voltage Max
2.69V
Operating Temperature Max
175°C
SVHC
Lead
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability