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G3F25MT06L-TR
Silicon Carbide MOSFET, AEC-Q101, Single, N Channel, 125 A, 650 V, 0.0275 ohm, TOLL
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 500+ | $20.810 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1200
Multiple: 1200
$24,972.00
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3F25MT06L-TR
Newark Part No.16AM7740
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id125A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.0275ohm
Transistor Case StyleTOLL
No. of Pins8Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation455W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
125A
Drain Source On State Resistance
0.0275ohm
No. of Pins
8Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Dec-2015)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TOLL
Rds(on) Test Voltage
18V
Power Dissipation
455W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate