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G3F33MT06J-TR
Silicon Carbide MOSFET, AEC-Q101, Single, N Channel, 80 A, 650 V, 0.038 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 500+ | $13.710 |
Price for:Each
Minimum: 800
Multiple: 800
$10,968.00
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3F33MT06J-TR
Newark Part No.16AM7742
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id80A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.038ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation261W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
80A
Drain Source On State Resistance
0.038ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Dec-2015)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
261W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate