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G3R30MT12K
Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.03 ohm, TO-247
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ManufacturerGENESIC
Manufacturer Part NoG3R30MT12K
Newark Part No.89AH0985
Product RangeG3R Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 7 week(s)
| Quantity | Price |
|---|---|
| 250+ | $26.040 |
Price for:Each
Minimum: 600
Multiple: 600
$15,624.00
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3R30MT12K
Newark Part No.89AH0985
Product RangeG3R Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id90A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.03ohm
On Resistance Rds(on)0.03ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage15V
Power Dissipation Pd400W
Gate Source Threshold Voltage Max2.69V
Power Dissipation400W
Operating Temperature Max175°C
Product RangeG3R Series
SVHCLead
Product Overview
G3R30MT12K is a 1200V, 30mohm, N-channel enhancement mode, silicon carbide MOSFET. Applications include solar inverters, motor drives, EV charging, high voltage DC-DC converters, switched mode power supplies, UPS, smart grid transmission and distribution, induction heating and welding.
- G3R™ (3rd generation) technology, low temperature coefficient of RDS(ON)
- Lower Q and smaller RG(INT), low device capacitances (COSS, CRSS)
- LoRing™ - electromagnetically optimized design, superior cost-performance index
- Robust body diode with low VF and low QRR, 100% avalanche (UIL) tested
- Compatible with commercial gate drivers, low conduction losses at all temperatures
- Faster and more efficient switching, lesser switching spikes and lower losses
- Reduced ringing, better power density and system efficiency
- Ease of paralleling without thermal runaway, superior robustness and system reliability
- Operating and storage temperature range from -55 to 175°C, TO-247-4 package
- Continuous forward current is 50A at Tc = 100°C, V = -5 / +15V
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.03ohm
No. of Pins
4Pins
Power Dissipation Pd
400W
Power Dissipation
400W
Product Range
G3R Series
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
Drain Source On State Resistance
0.03ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Gate Source Threshold Voltage Max
2.69V
Operating Temperature Max
175°C
SVHC
Lead
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate